Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – active junction...
Reexamination Certificate
2006-05-30
2006-05-30
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, active junction...
C257S368000
Reexamination Certificate
active
07053406
ABSTRACT:
An one-time programmable read only memory is provided. An N-type doping region and a first P-type doping layer are disposed in a P-type semiconductor substrate sequentially. A second P-type doping layer is disposed between the first P-type doping layer and the N-type doping region. The second P-type doping layer with higher doping level, which has a linear structure, is served as a bit line. An electrically conductive layer is disposed over the P-type semiconductor substrate. The electrically conductive layer also has a linear structure that crosses over the first P-type doping layer. The first N-type doping layer is disposed in the P-type semiconductor substrate between the electrically conductive layer and the first P-type doping layer. The arrangement of N-type and P-type doping layer is used to be selective diode device. An anti-fuse layer is disposed between the electrically conductive layer and the first N-type doping layer.
REFERENCES:
patent: 6185122 (2001-02-01), Johnson et al.
patent: 6777757 (2004-08-01), Peng et al.
Ho Chia-Hua
Hong Shih-Ping
Lee Shih-Chin
Lung Hsiang-Lan
Shih Yen-Hao
Jiang Chyun IP Office
MACRONIX International Co. Ltd.
Wojciechowicz Edward
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