One-time programmable memory and operating method thereof

Details One-time programmable memory and operating method thereof One-time programmable memory and operating method thereof

2011-03-08

2011-03-08

Le, Vu A (Department: 2824)

Static information storage and retrieval

Read only systems

C365S102000

Reexamination Certificate

active

07903444

ABSTRACT:
A one-time programmable memory cell is provided, the one-time programmable memory cell comprises: a gate dielectric layer disposed on a well; a gate electrode disposed on the gate dielectric layer; source/drain regions disposed in the well at the sides of the gate electrode, respectively; a first salicide layer disposed on one of the source/drain regions; a capacitive dielectric layer disposed on the gate electrode and the other of the source/drain regions; a first conductive plug disposed on the first salicide layer; and a second conductive plug disposed on the capacitive dielectric layer. The size of the first conductive plug is different form the size of the second conductive plug.

REFERENCES:
patent: 7161218 (2007-01-01), Bertin et al.
patent: 2008/0019165 (2008-01-01), Lin et al.

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