One-time programmable cell and memory device having the same

Details One-time programmable cell and memory device having the same One-time programmable cell and memory device having the same

2008-02-15

2010-12-14

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read only systems

C365S063000, C365S225700

Reexamination Certificate

active

07852656

ABSTRACT:
One-time programmable cell and memory device having the same includes a first metal oxide semiconductor (MOS) transistor configured to form a current path between a first node and a second node in response to a read-control signal, a second MOS transistor configured to form a current path between a third node and the second node in response to a write-control signal and an anti-fuse connected between the second node and a ground voltage terminal, wherein a voltage applied to the second node is output as an output signal.

REFERENCES:
patent: 6927997 (2005-08-01), Lee et al.
patent: 2008/0159042 (2008-07-01), Bertin et al.
patent: 05-266682 (1993-10-01), None
patent: 10-2003-0002156 (2003-01-01), None
patent: 2005-0001966 (2005-01-01), None
patent: 10-2005-0073747 (2005-07-01), None

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