Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...
Reexamination Certificate
2005-07-25
2008-12-16
Kunemund, Robert M (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having growth from a solution comprising a solvent which is...
C117S070000, C117S956000, C117S957000
Reexamination Certificate
active
07465352
ABSTRACT:
A method of homogeneously forming metal chalcogenide nanocrystals includes the steps combining a metal source, a chalcogenide source, and at least one solvent at a first temperature to form a liquid comprising assembly, and heating the assembly at a sufficient temperature to initiate nucleation to form a plurality of metal chalcogenide nanocrystals. The plurality of metal chalcogenide nanocrystals are then grown without injection of either the metal source or the chalcogenide source at a temperature at least equal to the sufficient temperature, wherein growth proceeds substantially without nucleation to form a plurality of monodisperse metal chalcogenide nanocrystals. An optional nucleation initiator can help control the final size of the monodisperse crystals. Such synthesis, without the need for precursor injection, is suitable for the industrial preparation of high-quality nanocrystals.
REFERENCES:
patent: 7144458 (2006-12-01), Zehnder et al.
patent: 2005/0022726 (2005-02-01), Wong et al.
Kunemund Robert M
Saliwanchik Lloyd & Saliwanchik
University of Florida Research Foundation Inc.
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