Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-12-15
1986-04-29
Hearn, Brian E.
Metal working
Method of mechanical manufacture
Assembling or joining
29571, 29576B, 29576W, 29579, 148 15, 148187, 148DIG83, 148DIG143, 357 49, 357 34, 430311, 156649, H01L 21265, H01L 2176
Patent
active
045847630
ABSTRACT:
A one mask technique for making substrate contact from the top surface of an integrated circuit device. A thin ion implanted region of one conductivity type is formed over the entirety of a major surface of the semiconductor substrate. By lithography and etching, a shallow etched region is formed to a depth below the region of the first conductivity type at the substrate surface in an area designated for substitute contacting. A region of a second conductivity type is then formed at the central portion of the etched region. The substrate is then heated to form a buried collector region of the first conductivity type and a portion of the reach-through region of the second conductivity type in the substrate. An epitaxial layer is next formed on the major surface of the substrate. A base region of the second conductivity type for the integrated circuit is then formed. A portion of the substrate reach-through, which is directly above the portion of the substrate reach-through previously formed, is also simultaneously formed along with the base. Then, emitter and collector reach-through regions are formed in the epitaxial layer followed by the step of providing electrical contacts. Deep dielectric isolation walls are formed at a suitable stage in the processing.
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Jambotkar Chakrapani G.
Malaviya Shashi D.
Hearn Brian E.
Hey David A.
International Business Machines - Corporation
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