One mask PT/PCMO/PT stack etching process for RRAM applications

Details One mask PT/PCMO/PT stack etching process for RRAM applications One mask PT/PCMO/PT stack etching process for RRAM applications

2005-10-18

2005-10-18

Nelms, David (Department: 2829)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S735000, C438S736000, C438S742000, C438S754000, C438S785000

Reexamination Certificate

active

06955992

ABSTRACT:
A method of dry etching a PCMO stack, includes preparing a substrate; depositing a barrier layer; depositing a bottom electrode; depositing a PCMO thin film; depositing a top electrode; depositing a hard mask layer; applying photoresist and patterning; etching the hard mask layer; dry etching the top electrode; dry etching the PCMO layer in a multi-step etching process; dry etching the bottom electrode; and completing the PCMO-based device.

REFERENCES:
patent: 6774004 (2004-08-01), Hsu et al.
patent: 6774054 (2004-08-01), Zhang et al.
patent: 6858905 (2005-02-01), Hsu et al.
Lee et al.,Dry Etching to Form Submicron Features in CMR Oxides: PrBaCaMnO3and LaSr MnO3, http://mse.ufl.edu/˜spear/recent_papers/cmr_oxides/cmr_oxides.pdf.

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