One mask, power semiconductor device fabrication process

Details One mask, power semiconductor device fabrication process One mask, power semiconductor device fabrication process

1997-05-22

2000-08-29

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making regenerative-type switching device

438135, 438138, H01L 21332

Patent

active

061107638

ABSTRACT:
A method of fabricating a MOS controlled thyristor (MCT) semiconductor power device which reduces process time, reduces cell size, and increases the density of turn-off channels. The method uses a single, dopant-opaque mask to form MCT structure above the bottom N and P layers, including the upper portions of PNP and NPN transistors which form the MCT and On-FETs and Off-FETs which operate the MCT. The single mask may also be used to fabricate floating field rings for the device. The method may also be used on both sides of the device to provide a Fast Turn Off (FTO) device with both On- and Off-FETs on one side and at least an Off-FET on the other side.

REFERENCES:
patent: 5194394 (1993-03-01), Terashima
patent: 5286981 (1994-02-01), Lilja et al.
patent: 5766966 (1998-06-01), Ng
patent: 5843796 (1998-12-01), Disney

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