Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1991-08-16
1993-07-06
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257234, H01L 2978, H01L 2714, H01L 3100
Patent
active
052256944
ABSTRACT:
A one-dimensional time-delay integration solid-state imager includes a plurality of light-to-electricity conversion parts which store signal charges generated in response to incident light, a vertical CCD corresponding to a series of the light-to-electricity conversion parts for transferring stored signal charges, and a gate for controlling transfer of signal charges stored at the light-to-electricity conversion parts to the vertical CCD. The signal charges corresponding to the same observed image moving on the plurality of light-to-electricity conversion parts are added to enhance the signal-to-noise ratio, and a background signal charge removing region for removing background signal charges is provided at the vertical CCD for removing background charges during the transfer of signal charges.
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Dereniak et al., "Time-Delay Integration (TDI)", Optical Radiation Detectors, 1984, pp. 254-256.
White et al., "A Multiple-Gate CCD-Photo-Diode Sensor Element for Imaging Arrays,", IEEE Transactions on Electron Devices, Feb. 1978, pp. 125-131.
Heyns et al., "The Resistive Gate CTD Area-Image Sensor,", IEEE Transactions on Electron Devices, Feb. 1978, pp. 135-139.
Nagayoshi Shinsuke
Tajime Tooru
James Andrew J.
Mitsubishi Denki & Kabushiki Kaisha
Ngo Ngan Van
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