One dimensional silicon quantum wire devices and the method of m

Details One dimensional silicon quantum wire devices and the method of m One dimensional silicon quantum wire devices and the method of m

1995-06-06

1997-03-18

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 40, H01L 21265, H01L 2144, H01L 2148

Patent

active

056122551

ABSTRACT:
A silicon quantum wire transistor. A silicon substrate is sub-etched leaving a thin ridge (.ltoreq.500 .ANG. tall by .ltoreq.500 .ANG. wide) of silicon a quantum wire, on the substrate surface. An FET may be formed from the quantum wire by depositing or growing gate oxide and depositing gate poly. After defining a gate, the source and drain are defined. Alternatively, an optically activated transistor is formed by defining an emitter and collector and providing a path for illumination to the wire.

REFERENCES:
patent: 4460413 (1984-07-01), Hirata et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4510016 (1985-04-01), Chi et al.
patent: 4666554 (1987-05-01), De Wilde et al.
patent: 4748132 (1988-05-01), Fukuzawa et al.
patent: 4784718 (1988-11-01), Mitani et al.
patent: 4803181 (1989-02-01), Buchmann et al.
patent: 4838991 (1989-06-01), Cote et al.
patent: 4859622 (1989-08-01), Eguchi
patent: 4931137 (1990-06-01), Sibuet
patent: 4979014 (1990-12-01), Hieda et al.
patent: 5093273 (1992-03-01), Okumura
patent: 5110760 (1992-05-01), Hsu
patent: 5144580 (1992-09-01), Niu et al.
patent: 5202272 (1993-04-01), Hsieh et al.
patent: 5204280 (1993-04-01), Dhong et al.
patent: 5244828 (1993-09-01), Okada et al.
patent: 5256248 (1993-10-01), Jun
patent: 5256587 (1993-10-01), Jun et al.
patent: 5281543 (1994-01-01), Fukuzawa
patent: 5293037 (1994-03-01), LeMehaute et al.
patent: 5296719 (1994-03-01), Hirai et al.
patent: 5346834 (1994-09-01), Hisamoto et al.
patent: 5350337 (1994-09-01), Yamazaki et al.
patent: 5391506 (1995-02-01), Tada et al.
Fujii, M., et al. "Quantum Dots of Ge Embedded in SiO.sub.2 Thin Films: Optical Properties" 20th Int'l Conf. on the Physics of Semiconductors, V.3, p. 2375-2378, 1990.

Affiliated with

Also associated with

Rating

One dimensional silicon quantum wire devices and the method of m does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with One dimensional silicon quantum wire devices and the method of m, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and One dimensional silicon quantum wire devices and the method of m will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705961