Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2006-10-31
2006-10-31
Mai, Son (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185100, C257S316000
Reexamination Certificate
active
07130216
ABSTRACT:
One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in the body region. A channel region is formed in the body region between the first diffusion region and the second diffusion region. The memory cell includes a gate insulator stack formed above the channel region, and a gate to connect to a word line. The gate insulator stack includes a floating plate to selectively hold a charge. The floating plate is connected to the second diffusion region. The memory cell includes a diode that connects the body region to the second diffusion region such that the floating plate is charged when the diode is reversed biased. Other aspects are provided herein.
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