One-device non-volatile random access memory cell

Details One-device non-volatile random access memory cell One-device non-volatile random access memory cell

2005-06-07

2005-06-07

Mai, Son (Department: 2818)

Static information storage and retrieval

Floating gate

Particular connection

C365S185100, C257S316000

Reexamination Certificate

active

06903969

ABSTRACT:
One aspect of the present subject matter relates to a one-device non-volatile memory cell. The memory cell includes a body region, a first diffusion region and a second diffusion region formed in the body region. A channel region is formed in the body region between the first diffusion region and the second diffusion region. The memory cell includes a gate insulator stack formed above the channel region, and a gate to connect to a word line. The gate insulator stack includes a floating plate to selectively hold a charge. The floating plate is connected to the second diffusion region. The memory cell includes a diode that connects the body region to the second diffusion region such that the floating plate is charged when the diode is reversed biased. Other aspects are provided herein.

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