On-wafer Hall-effect measurement system

Details On-wafer Hall-effect measurement system On-wafer Hall-effect measurement system

1991-09-23

1992-09-22

Nguyen, Vinh

Electricity: measuring and testing

Measuring, testing, or sensing electricity, per se

With rotor

324 731, 324719, 324226, 437 8, G01R 3100, G01R 1900

Patent

active

051500426

ABSTRACT:
A non-destructive measurement system for producing whole wafer maps of sheet Hall concentration and Hall mobility in a GaAs wafer. The wafer need only have van der Pauw patterns available for the wafer measurements to be made. The measurement system includes an automatic test prober apparatus modified to incorporate a powerful permanent magnet providing a magnetic field to produce a Hall effect in the GaAs wafer. A parametric measurement system coupled through test probes to the van der Pauw patterns is programmed to measure sheet resistivity, Hall voltage and magnetic field strength, from which are derived values of sheet Hall concentration and mobility that are stored and mapped.

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The Hall Effect and Magnetoresistance, Chapter 1, D. C. Look, Electrical Characterization of GaAs Mat. & Dev. (1989).
On-Wafer Hall-Effect Measurement System, P. D. Mumford & D. C. Look, pub. acc. Feb. 11, 1991.

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