On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and...

Details On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and... On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and...

2005-03-01

2005-03-01

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Avalanche diode

C257S190000, C257S103000, C257S201000, C257S185000, C257S186000, C257S438000, C257S442000, C257S461000

Reexamination Certificate

active

06861681

ABSTRACT:
A blue-ultraviolet on-p-GaAs substrate pin Zn1-xMgxSySe1-y photodiode with high quantum efficiency, small dark current, high reliability and a long lifetime. The ZnMgSSe photodiode has a metallic p-electrode, a p-GaAs single crystal substrate, a p-(ZnSe/ZnTe)m superlattice (m: integer number of sets of thin films), an optionally formed p-ZnSe buffer layer, a p-Zn1-xMgxSySe1-y layer, an i-Zn1-xMgxSySe1-y layer, an n-Zn1-xMgxSySe1-y layer, an n-electrode and an optionally provided antireflection film. Incidence light arrives at the i-layer without passing ZnTe layers. Since the incidence light is not absorbed by ZnTe layers, high quantum efficiency and high sensitivity are obtained.

REFERENCES:
patent: 6121638 (2000-09-01), Rennie et al.
patent: 6528395 (2003-03-01), Nakamura
patent: 20030067011 (2003-04-01), Ando et al.

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