Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1990-03-30
1992-04-21
Hudspeth, David
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
365195, 307310, H03K 500, H03K 326
Patent
active
051071398
ABSTRACT:
An on-chip transient event detector (FIG., 1) is fabricated onto an integrated circuit chip to provide rapid response to a detected event, such as a transient radiation dose or other condition that can cause transient current pulses. The transient event detector includes a detector circuit 10 that includes a narrow p-channel FET (12), and a wide n-channel FET (14). These detector transistors are coupled together and biased so that the narrow-channel transistor is normally on and the wide-channel transistor is normally off. A transient event, such as a photocurrent induced by radiation, causes a current pulse in the normally off wide-channel transistor that is sufficiently greater than the current in the narrow-channel transistor to cause a change in logic output, providing an event signal. The event signal can be used to disable memory WRITE operations during the transient event. The detector circuit can be integrated with an on-chip time-delay circuit (30) to provide a time-delayed system reset signal.
REFERENCES:
patent: 4730228 (1988-03-01), Einzinger et al.
patent: 4837744 (1989-06-01), Marquot
patent: 4864541 (1989-09-01), Marquot
patent: 4908799 (1990-03-01), Gaudronneau
patent: 4910707 (1990-03-01), Schrenk
Blake Terence G.
Houston Theodore W.
Lu Hsindao E.
Donaldson Richard L.
Hudspeth David
Sanders Andrew
Sorensen Douglas A.
Stoltz Richard A.
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