On-chip temperature sensor utilizing a Schottky barrier diode st

Thermal measuring and testing – Temperature measurement – By electrical or magnetic heat sensor

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357 10, 357 15, 357 28, G01K 700, H01L 31108, H01L 2714

Patent

active

051545144

ABSTRACT:
A temperature sensor, comprising: a diode structure including, a) a silicon substrate, b) a first region of a metal silicide in the silicon substrate, c) a second region of a metal-oxide semiconductor material on the first region, d) a third region of a metal over the second region; and, means for using the diode structure as a temperature sensitive device to measure an ambient temperature. The metal-oxide semiconductor material is preferably selected to have a bandgap of not less than about 3.0 eV.

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