Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Reexamination Certificate
2007-10-18
2011-11-22
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
C257S706000, C257S720000
Reexamination Certificate
active
08063483
ABSTRACT:
An electronic device comprises a die with at least one defined hot-spot area; and at least one defined intermediate temperature area at a temperature lower than the temperature of the hot-spot area. The device also comprises a cooling structure comprising at least one bundle of first nanotubes for cooling the hot spot area and at least one bundle of additional nanotubes for cooling the intermediate temperature area, and having heat conductivity lower than the bundle of first nanotubes. The heat conductivity of both sets of the nanotubes is sufficient to decrease any temperature gradient between the defined hot spot area, the defined intermediate temperature area, and at least one lower temperature area on the die. The walls of the first nanotubes and the additional nanotubes are surrounded by a heat conducting matrix material operatively associated with the lower temperature area.
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Dimitrakopoulos Christo Dimitrios
Georgiou Christos John
Grill Alfred
Rogowitz Bernice E.
Eichelburg Robert J.
International Business Machines - Corporation
The Law Offices of Robert J. Eichelburg
Vu Hung
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