On-chip temperature detection device

Miscellaneous active electrical nonlinear devices – circuits – and – External effect – Temperature

Reexamination Certificate

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Details

C327S083000, C327S138000, C327S262000, C327S371000, C327S378000, C327S513000

Reexamination Certificate

active

10961258

ABSTRACT:
An on-chip temperature detection device includes: a bipolar type power transistor; a mirror transistor in which a collector current, which is proportional to a collector current of the power transistor, flows; a current detection section that detects the collector current of the mirror transistor; a voltage detection section that detects a voltage between a base and an emitter of the power transistor; and a calculation section that calculates a chip temperature of the power transistor, based upon the collector current of the mirror transistor detected by the current detection section, and upon the voltage between the base and the emitter of the power transistor detected by the voltage detection section.

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patent: 06-252408 (1994-09-01), None

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