Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1998-08-31
2000-02-08
Mottola, Steven J.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330307, H03F 316
Patent
active
060231955
ABSTRACT:
In an on-chip source follower amplifier having at least one amplification circuit formed on a semiconductor substrate of a first conductivity type, the amplification circuit includes a driver transistor, a peripheral device, a first capacitance, and a high resistance. The driver transistor is formed in a first conductive region of a second conductivity type on the semiconductor substrate. The peripheral device is formed in a second conductive region of the second conductivity type on the semiconductor substrate. The second conductive region is isolated from the first conductive region. The first capacitance couples the first conductive region to a source of the driver transistor. The high resistance is connected between the first conductive region and a DC power supply.
REFERENCES:
patent: 5192920 (1993-03-01), Nelson et al.
patent: 5399989 (1995-03-01), Chern
patent: 5654673 (1997-08-01), Shinohara
Mutoh Nobuhiko
Nakano Takashi
Mottola Steven J.
NEC Corporation
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