On-chip screen type solid state image sensor and manufacturing m

Details On-chip screen type solid state image sensor and manufacturing m On-chip screen type solid state image sensor and manufacturing m

1993-05-24

1996-05-07

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257233, 257432, 257435, 437 53, H01L 27148, H01L 29768

Patent

active

055148883

ABSTRACT:
A first P-type diffusion layer is formed on a semiconductor substrate. A photodiode is formed thereon. A transfer channel is formed on the semiconductor substrate. Agate insulating film is grown from a silicon oxide film on the semiconductor substrate. A transfer gate electrode is formed on the gate insulating film by patterning polysilicon. A light-shielding film of a metallic evaporation film is formed on the transfer gate electrode so that light cannot enter the transmission channel only to be a smear component. A difference in level of about 2 to 4 .mu.m is formed on the semiconductor substrate of the transfer channel due to the transfer gate electrode and the light-shielding film. An underlying smooth layer is formed to smooth the surface difference in level, and a first light-shielding layer is formed on it. A transparent film is formed on it, and a third light-shielding layer is formed via a second light-shielding layer and a transparent film. Further, a transparent film having the same material and the same film thickness as the above transparent film covers the third light-shielding layer, and then is smoothed. An on-chip lens is formed on it. Thus, a negative influence of a flare light can be prevented.

REFERENCES:
patent: 5250825 (1993-10-01), Negishi et al.

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