Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1997-11-26
1998-08-04
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257758, H01L 2352
Patent
active
057898073
ABSTRACT:
A specific structure which improves the decoupling capacitance for the power conductors in parallel metal layers of a semiconductor device. The power conductors are arranged so that conductors vertically adjacent to each other in the two outer of three metal layers are never connected to the same supply voltage terminal, but rather to opposing terminals. To improve current carrying capacity and reduce area, a power conductor in one outer plane is connected to a power conductor in the other outer plane which is displaced vertically and laterally from the first power conductor. The connection is made through special stitch conductors in the intervening plane. The resulting structure improves power supply decoupling for the finished device by providing significantly greater capacitance associated with the power distribution system of the chip.
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Clark S. V.
Galvin Thomas F.
International Business Machines - Corporation
Phillips Steven B.
Saadat Mahshid D.
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