On-chip decoupling capacitor structures

Details On-chip decoupling capacitor structures On-chip decoupling capacitor structures

2007-08-07

2010-10-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S303000, C257S306000, C257S310000, C257S500000, C257SE29346, C438S239000, C438S244000, C438S253000, C438S396000

Reexamination Certificate

active

07816762

ABSTRACT:
The present disclosure provides on-chip decoupling capacitor structures having trench capacitors integrated with planar capacitors to provide an improved overall capacitance density. In some embodiments, the structure includes at least one deep trench capacitor, at least one planar capacitor, and a metal layer interconnecting said deep trench and planar capacitors. In other embodiments, the structure includes at least one deep trench capacitor and a metal layer in electrical communication with the at least one deep trench capacitor. The at least one deep trench capacitor has a shallow trench isolation region, a doped region, an inner electrode, and a dielectric between the doped region and the inner electrode. The dielectric has an upper edge that terminates at a lower surface of the shallow trench isolation region.

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