On chip CMOS VLSI reference voltage with feedback for...

Miscellaneous active electrical nonlinear devices – circuits – and – Specific identifiable device – circuit – or system – With specific source of supply or bias voltage

Reexamination Certificate

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Reexamination Certificate

active

06300822

ABSTRACT:

TECHNICAL FIELD OF THE INVENTION
This application relates in general to a reference voltage for a CMOS chip, and in specific to a mechanism which includes a feedback arrangement with a comparator and provides a dual level reference voltage to the comparator based upon the output of the comparator.
BACKGROUND OF THE INVENTION
The prior art typically forms a fixed voltage from a voltage divider. The fixed voltage serves as an on-chip reference voltage. For example, as shown in
FIG. 5
, voltage divider
51
provides a reference voltage V
ref
52
to comparator
53
. When the input signal, V
IN
54
, exceeds the reference voltage V
ref
52
, the comparator
53
will trigger and change the output signal
55
, typically from low to high. The voltage divider
51
forms V
ref
52
from V
TT
57
. The arrangement
50
is typically used as single-ended receiver circuit, with V
DD
56
being an on chip power supply voltage, while V
IN
54
is an off chip signal. The internal arrangement of the voltage divider
51
typically comprises two nFET transistors with the source of the first one tied to the drain of the second. The drain of the first FET is tied to V
TT
57
, and the source of the second FET is tied to ground. The gates of both FETS are connected to V
DD
56
. Note that for proper operation V
DD
>V
TT
+FET threshold voltage. The FETs are sized to produce the required reference voltage, i.e. V
ref
52
. The voltage divider could also use PVT (process, voltage, temperature) compensation to attempt to minimize drift from changes in process, power supply voltage V
DD
, or temperature, and thereby make the reference voltage more stable. Note that a voltage divider may also be formed from two pFETs in series or from a circuit comprising a pFET connected to V
TT
and a nFET connected to ground.
Another approach of the prior art is to produce the reference voltage off chip using two discrete resistors. The reference voltage is then brought on chip through at least one pin. However, this approach requires the signal to be routed along the PC board, which introduces noise into the reference voltage signal. If higher capacitive route is used requiring either wide traces or bypass capacitors, then the noise is reduced. However, cleaner power distribution mechanisms may reduce the area available for other mechanisms. Note that the large area forms a capacitance with the ground plane that stabilizes the signal. Using pins to bring the signal on chip also introduces noise into the reference signal. If more pins are used, then the noise is reduced. However, the more pins that are used for the reference voltage, reduces the number of pins available for other signals. Note that a high pin count stabilizes the signal by reducing loop inductance. Thus, these two trades offs make this approach undesirable.
Noise tolerance is a problem with arrangement
50
. Ringing or other noise would cause the V
IN
54
input signal to cross the reference voltage V
ref
52
. Thus, the comparator would inadvertently trip, and possibly send an incorrect signal onto other portions of the chip. Note that noise can be caused by crosstalk, such that another signal couples with the input signal line V
IN
54
. Other noise can be caused by reflections from impedance mismatch from different media connections.
FIGS. 6A-6D
depict the effects of noise on the arrangement of FIG.
5
. Each of the graphs of
FIGS. 6A-6D
depict various voltages of the arrangement of
FIG. 5
at a common reference time. Note that the time line is in nanoseconds. The off chip signal
57
is the signal generated by an off chip (i.e. off of the comparator chip) device. The off chip driving signal is the signal sent by the driving circuit of the off chip device. Note the noise introduced by the transmission line effects. This signal, which is received by the receiving circuitry, V
IN
54
, is replete with noise when compared with off chip signal
57
. Some of the noise spikes are above the reference voltage V
ref
52
. Spikes
61
and
62
are high enough to the comparator output signal
55
to exceed the receiver latch threshold voltage
59
, as shown by
61
′ and
62
′. Thus, the noise has caused erroneous signals to be propagated through the receiving chip.
The prior art has attempted to solve this problem by constructing the comparator with a built-in hysteresis mechanism, using feedback. The hysteresis comparator has the values of the FETs inside the comparator changed from a standard comparator. In a standard comparator, there are two branches, one connected to the positive input and one connected to the negative input. The FET sizes, connected to both the positive input and the negative input, are closely matched. If the positive and negative inputs are identical, then the currents going through are equal. When there is the slightest difference between the positive and the negative inputs, the comparator will switch to whichever branch has the higher gate voltage. If the FET sizes are changed, then the currents are thrown off balance and therefore, create an unevenness as to where the output will switch. Thus, the comparator will switch with some offset. In order for the output of the comparator to switch, a greater change in the input signal is required, e.g. if the signal is low and the threshold has been increased, then the input signal must go slightly above the original threshold voltage before the comparator will trip. This provides some measure of tolerance of noise, and prevents improper comparator tripping.
However, this solution has several disadvantages. First, the design of the hysteresis comparator is not portable. Each comparator would have be constructed with different elements, reflecting the different input signals, as well as the different operations of the output signals. Moreover, in some instances hysteresis is not desired, particularly when a true differential receiver is required. Thus, multiple comparators would have to be designed and constructed on each chip device.
Therefore, there is a need in the art for a hysteresis mechanism that provides noise tolerance and does not require each individual receiver or comparator to be specifically modified. Moreover, there is a need in the art for a mechanism to disable hysteresis when it is not needed.
SUMMARY OF THE INVENTION
These and other objects, features and technical advantages are achieved by a system and method which uses a reference voltage mechanism to provide hysteresis that is separate from the comparator. The mechanism generates two different voltage values, one high level and one low level. The mechanism will select the proper level based on the output of the comparator. Thus, the reference voltage will be slightly higher or slightly lower than a nominal reference value, and thereby increasing the noise tolerance for signal receiver chips. Note that the comparator is unaffected by the mechanism other than the reference voltage that the comparator uses is being changed.
Since the mechanism is separate from the comparator, different comparators do not have be designed and tested. Thus, the layout of the comparator can be duplicated throughout the chip design, and modifications to the comparator can be implemented easier and faster. This greatly simplifies the chip production process. Also, the mechanism can be disabled by a shorting some of the nodes of the mechanism together. This change can be made in the metal deposition step of the device fabrication. Thus, if the hysteresis is not needed for a particular comparator, then the mechanism can be effectively removed without having to make changes in the underlying silicon layers.
The inventive mechanism comprises three circuits, with one circuit for providing a high level reference voltage, another circuit for providing a low level reference voltage, and a third circuit for selecting one of the other two circuits to serve as the reference voltage for the comparator based upon the output of the comparator. The high level voltage and the low level voltage are slightly above and below the nominal

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