Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2006-04-26
2011-11-01
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S306000, C257S307000, C257S312000, C257S528000, C257S534000, C257SE27048, C438S393000, C438S396000
Reexamination Certificate
active
08049302
ABSTRACT:
At least a first capacitor is formed on a substrate and connected to a first differential node of a differential circuit, and the first capacitor may be variable in capacitance. A second capacitor is formed on the substrate and connected to a second differential node of the differential circuit, and the second capacitor also may be variable. A third capacitor is connected between the first differential node and the second differential node, and is formed at least partially above the first capacitor. In this way, a size of the first capacitor and/or the second capacitor may be reduced on the substrate, and capacitances of the first and/or second capacitor(s) may be adjusted in response to a variable characteristic of one or more circuit components of the differential circuit.
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Darabi Hooman
Li Oiang
Zhang Bo
Brake Hughes Bellermann LLP
Broadcom Corporation
Lin John
Parker Kenneth
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