On chip capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

Reexamination Certificate

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Details

C361S311000, C257S303000, C438S396000

Reexamination Certificate

active

07082026

ABSTRACT:
A high capacity silicon capacitor formed on an integrated circuit substrate includes a metal portion on the substrate; a silicon nitride (SiN) portion sputtered on the metal; a silicon (Si) portion sputtered on the silicon nitride portion, another SiN layer and finally a metal layer. The SiN layers are for increased isolation and are optional.

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patent: 2004/0224445 (2004-11-01), Schmidt

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