Coherent light generators – Particular active media – Semiconductor
Patent
1998-05-12
2000-11-28
Font, Frank G.
Coherent light generators
Particular active media
Semiconductor
372 8, 257113, H01L 2974, H01S 330, H01S 500
Patent
active
061544779
ABSTRACT:
A laser activated semiconductor switching device has a semiconductor structure housed in a semiconductor structure housing, and a laser array assembly directly connected to the semiconductor structure housing. The laser array assembly houses a plurality of laser diodes and diode control circuitry which energizes the laser diodes to emit light directly onto a surface of the semiconductor structure, which can be the cathode or anode surface, to cause the semiconductor structure to generate current carriers which enable passage of current through the semiconductor structure. The device can further include a second laser array assembly which is connected to the side of the semiconductor structure housing opposite to that on which the first laser array assembly is connected, and is configured to operate in a manner similar to the first laser array assembly. The surfaces of the semiconductor structure can be covered with metal layers having openings which permit the passage of the laser light into the semiconductor structure. The metal layers are reflective to the laser light and prevent the laser light that has passed into the semiconductor structure from exiting the structure to improve current carrier generation.
REFERENCES:
patent: 3663838 (1972-05-01), Reimers
patent: 4016592 (1977-04-01), Yatsuo et al.
patent: 4047219 (1977-09-01), Temple
patent: 4053922 (1977-10-01), Ferro
patent: 4060826 (1977-11-01), Voss
patent: 4100562 (1978-07-01), Sugawara et al.
patent: 4131905 (1978-12-01), Hanes et al.
patent: 4186409 (1980-01-01), McMullin
patent: 4368481 (1983-01-01), Ohashi et al.
patent: 4500164 (1985-02-01), Kiyohara
patent: 4561096 (1985-12-01), Namizaki et al.
patent: 4757367 (1988-07-01), Konishi et al.
patent: 4779126 (1988-10-01), Herman
patent: 4812892 (1989-03-01), Voss
patent: 4829357 (1989-05-01), Kasahara
patent: 4864168 (1989-09-01), Kasahara et al.
patent: 4866500 (1989-09-01), Nishizawa et al.
patent: 4974047 (1990-11-01), Niwayama
patent: 4975755 (1990-12-01), Nishizawa
patent: 5003192 (1991-03-01), Beigel
patent: 5017991 (1991-05-01), Nishizawa et al.
patent: 5121401 (1992-06-01), Dahl
patent: 5138415 (1992-08-01), Yano
patent: 5206540 (1993-04-01), De Sa e Silva et al.
patent: 5258670 (1993-11-01), Baba et al.
patent: 5349599 (1994-09-01), Larkins
patent: 5646760 (1997-07-01), Kuijk et al.
patent: 5663580 (1997-09-01), Harris et al.
patent: 5672917 (1997-09-01), Nakano
patent: 5677552 (1997-10-01), Ogura
Victor A.K. Temple et al., "High-Power Dual Amplifying Gate Light Triggered Thyristors", IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug., 1976, pp. 893-898.
Dieter Silber et al., "Progress in Light Activated Power Thyristors", IEEE Transactions on Electron Devices, vol. ED-23, No. 8, Aug., 1976, pp. 899-904.
L.R. Lowry, Optically Activated Switch, Aprl., 1978, cover thru p. 295.
Victor A.K. Temple et al., Light-Triggered Thyristors for Electric Power Systems, Nov., 1978, cover thru p. 4-11.
Andre A. Jaecklin, "Turn-on Phenomena in Optically and Electrically Fired Thyristors", IEEE Transactions on Electron Devices, vol. ED-29, No. 10, Oct., 1982, pp. 1552-1559.
Andre A. Jaecklin, "Two-Dimensional Model of a Thyristor Turn-On Channel", IEEE Transactions on Electron Devices, vol. ED-29, No. 10, Oct., 1982 pp. 1529-1535.
L.O. Eriksson et al., "A Light Triggered Pilot Thyristor For High Voltage Applications", Satech '86, cover thru p. 12.
A. Rosen et al., Optically Activated Pin Diode Switch*, 1988, cover thru p. 2-30.
I.L. Somos et al. Plasma Spreading Loss in 100mm Thyristors, Power Conversion Intelligent Motion, Jun., 1988, pp. 1-4.
H.H. Glascock II et al., Advanced Packages for Power Devices, Jun., 1990, cover thru p. 33.
S. Levy et al., Commerical Applications for Modulators and Pulse Power Technology, 1991, pp. 1-20.
Jian H. Zhao et al., Dynamic I-V Characteristic of an AlGaAs/GaAs-Based Optothyristor for Pulsed Power-Switching Applications, IEEE Electron Device Letters, vol. 13, No. 3, Mar. 1992, pp. 161-163.
Jian H. Zhao et al., "An InP-Based Optothyristor for Pulsed Power-Switching Applications", IEEE Electron Device Letters, vol. 14, No. 3, Mar. 1993, pp. 140-142.
Golden Jeffry
Schneider Sol
Weidenheimer Douglas M.
Berkeley Research Associates, Inc.
Font Frank G.
Rodriguez Armando
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