On-axis electron impact ion source

Radiant energy – Ion generation – Electron bombardment type

Reexamination Certificate

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C250S288000, C250S292000, C250S293000, C250S42300F

Reexamination Certificate

active

11271443

ABSTRACT:
An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.

REFERENCES:
patent: 5942752 (1999-08-01), Wang
patent: 6627883 (2003-09-01), Wang et al.
patent: 6911650 (2005-06-01), Park
patent: 6919562 (2005-07-01), Whitehouse et al.
patent: 6998622 (2006-02-01), Wang et al.
patent: 7049584 (2006-05-01), Whitehouse et al.
patent: 2002/0092980 (2002-07-01), Park
patent: 2004/0217284 (2004-11-01), Malek et al.
patent: 2005/0139760 (2005-06-01), Wang et al.
patent: 2006/0145072 (2006-07-01), Wang et al.

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