On-axis electron impact ion source

Details On-axis electron impact ion source On-axis electron impact ion source

2006-02-14

2006-02-14

Lee, John R. (Department: 2881)

Radiant energy

Ion generation

Electron bombardment type

C250S42300F, C250S424000, C250S281000, C250S282000, C250S288000, C250S292000, C250S293000

Reexamination Certificate

active

06998622

ABSTRACT:
An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.

REFERENCES:
patent: 5763878 (1998-06-01), Franzen
patent: 5942752 (1999-08-01), Wang
patent: 6528784 (2003-03-01), Tang et al.
patent: 6627883 (2003-09-01), Wang et al.
patent: 6911650 (2005-06-01), Park
patent: 6919562 (2005-07-01), Whitehouse et al.
patent: 2004/0238755 (2004-12-01), Lee et al.
patent: 2005/0139760 (2005-06-01), Wang et al.
patent: 2005/0167584 (2005-08-01), Kernan et al.
patent: WO 2004/079765 (1999-09-01), None

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