Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2009-06-17
2011-10-04
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S192000, C257S027000, C257S368000, C257S195000
Reexamination Certificate
active
08030688
ABSTRACT:
A method for fabricating a semiconductor device which protects the ohmic metal contacts and the channel of the device during subsequent high temperature processing steps is explained. An encapsulation layer is used to cover the channel and ohmic metal contacts. The present invention provides a substrate on which a plurality of semiconductor layers are deposited. The semiconductor layers act as the channel of the device. The semiconductor layers are covered with an encapsulation layer. A portion of the encapsulation layer and the plurality of semiconductor layers are removed, wherein ohmic metal contacts are deposited. The ohmic metal contacts are then annealed to help reduce their resistance. The encapsulation layer ensures that the ohmic metal contacts do not migrate during the annealing step and that the channel is not harmed by the high temperatures needed during the annealing step.
REFERENCES:
patent: 5300795 (1994-04-01), Saunier et al.
patent: 5393990 (1995-02-01), Kohn
patent: 5696389 (1997-12-01), Ishikawa et al.
patent: 5739558 (1998-04-01), Ishida et al.
patent: 5760418 (1998-06-01), Lee et al.
patent: 5766695 (1998-06-01), Nguyen et al.
patent: 5929467 (1999-07-01), Kawai et al.
patent: 6100548 (2000-08-01), Nguyen et al.
patent: 6255673 (2001-07-01), Kuzuhara
patent: 6316793 (2001-11-01), Sheppard et al.
patent: 6391696 (2002-05-01), Onda
patent: 6492669 (2002-12-01), Nakayama et al.
patent: 0218183 (2003-11-01), Micovic et al.
patent: 2001/0013604 (2001-08-01), Hase
patent: 2001/0023964 (2001-09-01), Wu et al.
patent: 2004/0021152 (2004-02-01), Nguyen et al.
patent: 2004/0029330 (2004-02-01), Hussain et al.
patent: 2004/0094759 (2004-05-01), Nguyen et al.
patent: 0899782 (1999-03-01), None
patent: 2002-016087 (2002-01-01), None
patent: 01/13436 (2001-02-01), None
patent: 01/57929 (2001-08-01), None
Konig, et al., “Enhancement Mode n-Channel Si/SiGe MODFET with a High Intrinsic Transconductance,”Electronics Letters, vol. 28, No. 2, pp. 160-162, 1992.
U.S. Appl. No. 10/600,521, filed Jun. 19, 2003, Nguyen et al.
Hashimoto Paul
Hussain Tahir
Kurdoghlian Ara K.
Micovic Miroslav
Peng Gary
HRL Laboratories LLC
Ladas & Parry
Pham Long
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