Ohmic electrode of n-type semiconductor cubic boron nitride and

Details Ohmic electrode of n-type semiconductor cubic boron nitride and Ohmic electrode of n-type semiconductor cubic boron nitride and

1995-04-25

1996-06-18

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437190, 148DIG113, H01L 2144

Patent

active

055277357

ABSTRACT:
N-type c-BN is a heat-resistant material with a wide band gap. Ohmic electrodes are indispensable for making semiconductor devices utilizing n-type c-BN. The electrodes proposed so far are likely to deteriorate in an atmosphere of high temperature. The degradation of electrodes hinders the production of semiconductor devices utilizing c-BN. A heat-resistant ohmic electrode is produced by forming a low contact resistance layer of a boride or a nitride of Ti, Zr or Hf on a heated c-BN and by covering the low resistance layer by an Au layer. Otherwise an ohmic electrode is produced by forming a low contact resistance layer of one of Ti, Zr, Hf, etc. on c-BN, making a diffusion barrier layer of W, Mo, Ta or Pt and depositing an Au layer on the diffusion barrier layer.

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