Ohmic electrode materials for semiconductor ceramics and semicon

Details Ohmic electrode materials for semiconductor ceramics and semicon Ohmic electrode materials for semiconductor ceramics and semicon

1993-10-04

1994-10-25

Lieberman, Paul

Compositions

Electrically conductive or emissive compositions

Free metal containing

252518, 501 19, 501 32, 501 76, H01B 100, H01B 104

Patent

active

053586662

ABSTRACT:
An ohmic electrode material for semiconductor ceramics comprises 48-96 weight % of aluminum and 4-52 weight % of silicon. A semiconductor ceramics element includes a semiconductor ceramics such as that of barium titanate system semiconductor ceramics and on the surface of the semiconductor ceramics is formed an ohmic electrode from the ohmic electrode material.

REFERENCES:
patent: 3561986 (1971-02-01), Broemer et al.
patent: 4053864 (1977-10-01), Rodriguez et al.
patent: 4148761 (1979-04-01), Kazmierowicz
patent: 4938244 (1990-07-01), Kumada et al.
patent: 5053283 (1991-10-01), Brown
"Preparation of Aluminum Conducting Paste for Solar Panels" Dubey (India) IN 159860 A (13 Jun. 1987).

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