Ohmic electrode, its fabrication method and semiconductor device

Details Ohmic electrode, its fabrication method and semiconductor device Ohmic electrode, its fabrication method and semiconductor device

1997-03-24

1998-05-05

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257743, 257750, 257763, 257766, 257768, H01L 2348, H01L 2352

Patent

active

057478783

ABSTRACT:
An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors is provided to have satisfactory practical characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing particles of a precipitate composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.

REFERENCES:
patent: 4228455 (1980-10-01), Yasuda et al.
patent: 5045408 (1991-09-01), Williams et al.
patent: 5309022 (1994-05-01), Gill et al.
patent: 5317190 (1994-05-01), Fleischman et al.
patent: 5358899 (1994-10-01), Fleischman et al.
patent: 5430310 (1995-07-01), Shibasaki et al.
Journal of Vacuum Science & Technology B. vol. 4, No. 3, May 1986-Jun. 1986 Woodbury, NY, US. pp. 762-768, Taeil Kim et al. "The Effects of Germanium Concentration on the Compound Formation and Morphology of Gold-Based Contacts. Etc".
Thin Solid Films, vol. 147; No. 2, Mar. 2, 1987, Lausanne, Switzerland, pp. 177-192, Taeil Kim et al. In Situ X-ray Diffraction Study of the Effects of Germanium and Nickel Concentration on Melting in Gold-Based Contacts to Gallium Etc.
Jornal of Applied Physics, Vo. 75, No. 5, Mar. 1, 1994, New York pp. 2530-2537, H.R. Kawata et al. "NiGe-base ohmic contacts to n-type GaAs II. Effects of Au Addition".

Affiliated with

Also associated with

Rating

Ohmic electrode, its fabrication method and semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ohmic electrode, its fabrication method and semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ohmic electrode, its fabrication method and semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-57455