Ohmic electrode for a p-type compound semiconductor and a bipola

Details Ohmic electrode for a p-type compound semiconductor and a bipola Ohmic electrode for a p-type compound semiconductor and a bipola

1995-03-06

1996-06-04

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257763, 257764, 257766, H01L 2945

Patent

active

055236235

ABSTRACT:
An ohmic electrode for a p-type III-V compound semiconductor is disclosed. The ohmic electrode formed on a p-type III-V compound semiconductor layer includes nickel (Ni), titanium (Ti), and platinum (Pt) as main components in an interface between the ohmic electrode and the p-type III-V compound semiconductor layer.

REFERENCES:
patent: 4673593 (1987-06-01), Himoto
patent: 4853346 (1989-08-01), Baker et al.
patent: 5077599 (1991-12-01), Yano et al.
patent: 5179041 (1993-01-01), Yano et al.
patent: 5284798 (1994-02-01), Ibuka et al.
Mochizuki et al., Au/Pt/Ti/Ni Ohmic Contacts to p-ZnSe, Electronics Letters, Nov. 10, 1994, vol. 30, No. 23, pp. 1984-1985.
Okada et al, Japanese Journal of Appl. Physics, vol. 30, No. 4A, pp. L558-L-560, 1991, "Electrical Characteristics & Reliability of Pt/Ti/Pt/Au . . . ".
Sugiyama et al, Extended Abs. of 1993 Intl. Conf. on Solid State Devices & Materials, Makuhari, pp. 1062-1064, 1993.

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