Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide
Patent
1996-06-28
1997-09-16
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
Diamond or silicon carbide
257751, 257761, 257763, 257764, 257770, H01L 310312, H01L 2348, H01L 2352, H01L 2940
Patent
active
056683820
ABSTRACT:
An ohmic electorde of the present invention comprises a contact electrode layer formed on a p-type diamond semiconductor layer formed on a substrate so as to be in ohmic contact with the p-type diamond semiconductor layer and to have low contact resistance and high heat resistance, and a lead electrode layer formed on the contact electrode layer so as to have low lead wire resistance and high heat resistance. Specifically, the contact electrode layer is made of either a carbide of at least one metal selected from a metal group comprising Ti, Zr, and Hf, or a carbide of an alloy containing at least one metal selected from the metal group. Since the carbide of the metal or alloy forming the contact electrode layer is stabler in respect of energy because of reduced formation enthalpy than the metal or alloy itself, it is very unlikely to diffuse. Therefore, little metal or alloy forming the contact electrode layer precipitates on the surface of the lead electrode layer formed on the contact electrode layer, thus improving the device performance, based on the reduced lead wire resistance.
REFERENCES:
patent: 4982243 (1991-01-01), Nakahata et al.
patent: 5055424 (1991-10-01), Zeidler et al.
Japanese Journal of Applied Physics, vol. 28, No. 5.1, May 1989, Tokyo JP, pp. 758-762, H. Shiomi et al., "Electrical characteristics of metal contacts to boron-doped diamond epitaxial film," p. 761, column 2, line 39-line 51.
Nishibayashi Yoshiki
Shikata Shin-ichi
Toda Naohiro
Tomikawa Tadashi
Ngo Ngan V.
Sumitomo Electric Industries Ltd.
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