Ohmic contacts for semiconductor devices

Details Ohmic contacts for semiconductor devices Ohmic contacts for semiconductor devices

1983-08-08

1985-04-09

Smith, John D.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

357 67, 357 71, 427 89, 427 91, H01L 2354

Patent

active

045105146

ABSTRACT:
Disclosed is an indium-containing semiconductor device which includes an ohmic contact formed by application of successive layers of Au-Sn-Cr-Au. The combination of Sn and Cr layers provides an effective barrier to the diffusion of indium to the surface of the contact so that bonding to the contact is not impeded.

REFERENCES:
patent: 3959522 (1976-05-01), Ladany
patent: 4179534 (1979-12-01), Chang
patent: 4395727 (1983-07-01), Lauterbach
patent: 4414561 (1983-11-01), Keramidas
"Interdiffusion of Thin Cr and Au Films Deposited on Silicon", Thin Film Solids, vol. 38, G. Majni et al., 1976, pp. 15-19.
"Ohmic Contacts to InP and InGaAsP", Inst. Phys. Conf. Ser. No. 56, Chap. 5, V. G. Keramidas et al., 1981, pp. 293-299.
"Low Resistance Ohmic Contacts to p-InP", Electronics Letters, vol. 18, No. 17, C. L. Cheng et al., Aug. 19, 1982, pp. 755-756.

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