Coating processes – Electrical product produced – Condenser or capacitor
Patent
1984-07-16
1985-07-16
Smith, John D.
Coating processes
Electrical product produced
Condenser or capacitor
427 74, 427 87, 427 88, 427 93, H01L 21324
Patent
active
045296197
ABSTRACT:
A method of forming an ohmic contact between an amorphous silicon hydride semiconductor and a substrate which includes coating a film of palladium on the substrate and overcoating the palladium with a thin film of amorphous silicon hydride forming a thin palladium silicide layer. The amorphous silicon hydride is dehydrogenated by annealing forming a highly defective amorphous silicon layer and a thicker palladium silicide layer through which carriers can readily tunnel. The amorphous silicon hydride semiconductor is then coated over the amorphous silicon layer to the desired thickness.
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Matysik et al., "Hydrogen Evolution from Plasma-Deposited Amorphous Silicon Films", J. Vac. Sci. Technol. 15(2), Mar./Apr. 1978, pp. 302-304.
IBM Technical Disclosure Bulletin, vol. 19, No. 9, Feb. 1977, "Contact Barrier Metallurgy for Mosfet Gate", P. L. Garbarino et al.
Nemanich Robert J.
Thompson Malcolm J.
Smith John D.
Tomlin Richard A.
Xerox Corporation
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