Ohmic contacts for group III-V n-type semiconductors using epita

Details Ohmic contacts for group III-V n-type semiconductors using epita Ohmic contacts for group III-V n-type semiconductors using epita

1978-08-11

1980-02-19

Esposito, Michael F.

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 148175, 427 85, 427 86, 427 88, 427 91, 156DIG67, 156662, 156612, 156613, 357 16, 357 67, 357 71, H01L 2122, H01L 21225

Patent

active

041887107

ABSTRACT:
A solid-state diffusion method for providing ohmic contacts to n-type Group II-V semiconductor materials, such as gallium arsenide (GaAs). The material is successively cleaned, etched, rinsed, re-etched, rinsed and placed in an oil-free vacuum. The substrate is then heated to desorb surface oxides and an epitaxial layer of germanium and a layer of nickel, or other refractory, are deposited on the substrate at specific temperatures. Next, the structure is annealed in the vacuum at temperatures sufficient to diffuse the germanium into the GaAs material and to establish an ohmic contact.

REFERENCES:
patent: 3577286 (1971-05-01), Berkenblit
patent: 3716407 (1973-02-01), Kahn
patent: 3753804 (1973-08-01), Tijburg
patent: 3846169 (1974-11-01), Diguet
patent: 3914785 (1975-10-01), Ketchow
patent: 3923975 (1975-12-01), Caluiello
patent: 4119994 (1978-10-01), Jain
patent: 4128733 (1978-12-01), Fraas

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