Ohmic contact using binder paste with semiconductor material dis

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257743, 257744, 136256, H01L 310224, H01L 2943

Patent

active

055571468

ABSTRACT:
An ohmically conductive contact for a thin film p-type semiconductor compound formed of at least one of the metal elements of Class IIB of the Periodic Table of Elements and at least one of the non-metal elements of Class VIA of the Periodic Table of Elements and photovoltaic devices incorporating such contacts. An ohmic contact, according to the invention, includes a layer of conductive binder paste having mercury telluride and/or copper telluride dispersed therein. The invention also relates to a method of forming such ohmic contacts.

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