Ohmic contact to silicon substrate

Details Ohmic contact to silicon substrate Ohmic contact to silicon substrate

1989-08-01

1991-03-05

Larkins, William D.

Fishing, trapping, and vermin destroying

357 67, 357 71, 437159, 437200, 148DIG19, H01L 2348, H01L 2946, H01L 2940, H01L 2554

Patent

active

049981579

ABSTRACT:
In a semiconductor device including a substrate of Si or polycrystalline silicon and an interlayer insulation film region, a region for interconnection with the substrate is composed of a refractory metal silicide layer, a refractory metal nitride layer, an Al or Al alloy layer, and possibly a further refractory metal nitride layer, while a region for interconnection on the interlayer insulation film on the substrate is composed of a refractory metal, or refractory metal oxide layer, a refractory metal nitride layer, an Al or Al alloy layer, and possibly a further refractory metal nitride layer, providing interconnections for integrated circuits. In the manufacture of this interconnection structure, rapid thermal annealing is performed at 600.degree.-1000.degree. C. on the refractory metal nitride layer of the region for interconnection with the substrate, followed by the formation of Al or Al alloy layer.

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Takeo Maeda, Takeo Nakayama, Shohei Shima and Jun'ichi Matsunaga, "A Highly Reliable Interconnection for a BF.sub.2 .sup.+ -Implanted Junction Utilizing A TiN/Ti Barrier Metal System, IEEE Transactions on Electron Devices", vol. ED-34, No. 3, Mar. 1987, pp. 599-606.
Jim Stimmell, "Properties of dc Magnetron Reactively Sputtered TiN", J. Vac. Sci. Technol. B4(6), Nov./Dec. 1986, pp. 1377-1382.

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