Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-13
2006-06-13
Vu, Hung (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S745000
Reexamination Certificate
active
07061110
ABSTRACT:
An ohmic contact of semiconductor and its manufacturing method are disclosed. The present invention provides a low resistivity ohmic contact so as to improve the performance and reliability of the semiconductor device. This ohmic contact is formed by first coating a transition metal and a noble metal on a semiconductor material; then heat-treating the transition metal and the noble metal in an oxidizing environment to oxidize the transition metal. In other words, this ohmic contact primarily includes a transition metal oxide and a noble metal. The oxide in the film can be a single oxide, or a mixture of various oxides, or a solid solution of various oxides. The metal of the film can be a single metal, or various metals or an alloy thereof. The structure of the film can be a mixture or a laminate or multilayered including oxide and metal. The layer structure includes at least one oxide layer and one metal layer, in which at least one oxide layer is contacting to semiconductor.
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Chen Chin-Yuan
Cheng Chenn-shiung
Chiu Chienchia
Ho Jin-Kuo
Huang Chao-Nien
Industrial Technology Research Institute
Townsend and Townsend / and Crew LLP
Vu Hung
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