Ohmic contact to p-type ZnSe

Details Ohmic contact to p-type ZnSe Ohmic contact to p-type ZnSe

1992-05-05

1994-03-08

Ngo, Ngan

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 78, 257609, 257614, 257746, H01L 2348, H01L 2946, H01L 2962

Patent

active

052930742

ABSTRACT:
A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafter, a, b and c each =0-1 and a+b+c=1.

REFERENCES:
patent: 4123295 (1978-10-01), McCaldin et al.
patent: 4456670 (1984-06-01), Basol
patent: 5150191 (1992-09-01), Motegi et al.

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