Ohmic contact to p-type InP

Details Ohmic contact to p-type InP Ohmic contact to p-type InP

1979-09-27

1982-12-28

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427125, 357 67, 357 71, 29569L, H01L 2128, B05D 512

Patent

active

043661866

ABSTRACT:
An ohmic contact to a semiconductor device comprising p-type InP is formed by sequentially depositing beryllium-gold and gold layers on InP and then heat-treating the device at a temperature less than 440 degrees C. An ohmic contact to p-type InGaAsP can be similarly formed.

REFERENCES:
patent: 3215654 (1965-10-01), Armstrong et al.
patent: 3620847 (1971-11-01), Wise
patent: 3850688 (1974-11-01), Halt
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 4022931 (1977-05-01), Black et al.
patent: 4218271 (1980-08-01), Wood
patent: 4258375 (1981-03-01), Hsieh et al.
patent: 4260429 (1981-04-01), Moyer
Bergh et al., Light-Emitting Diodes, Clarendon Press, Oxford, 1976, pp. 441, 456.
Schumaker et al., "Dicing Induced Damage in GaP Electroluminescent Diodes", Journal of the Electrochemical Society, vol. 119, No. 9, Sep. 1972, p. 1233.
Schiavone et al., "Ohmic Contacts for Moderately Resistive p-Type InP", Journal of Applied Physics, vol. 46, No. 1, Jan. 1975, pp. 452-453.
Ho et al., "Stable Junctions Between GaAs Semiconductors and Metal Contacts Using a Metallic Compounds as a diffusion Barrier", IBM Tech. Disclosure Bulletin, vol. 21, No. 4, Sep. 1978, p. 1752.

Affiliated with

Also associated with

Rating

Ohmic contact to p-type InP does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ohmic contact to p-type InP, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ohmic contact to p-type InP will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1337244