Ohmic contact to p-type Group III-V semiconductors

Details Ohmic contact to p-type Group III-V semiconductors Ohmic contact to p-type Group III-V semiconductors

1983-01-24

1984-09-11

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 85, 357 67, H01L 21283

Patent

active

044710054

ABSTRACT:
A plurality of pairs of layers comprising gold and zinc are successively evaporated onto a p-type Group III-V semiconductor material such as indium phosphide. A final layer of gold is evaporated onto the pairs of layers prior to heating the multilayer contact. Successive layers of chromium and gold may be evaporated onto the final gold layer prior to the annealing step.

REFERENCES:
patent: 3850688 (1974-11-01), Halt
patent: 3959036 (1976-05-01), Ketchow
patent: 3975555 (1976-08-01), Ladany et al.
patent: 4195308 (1980-03-01), Hawrylo
patent: 4366186 (1982-12-01), Keramidas
J. of Applied Physics, vol. 46, No. 1, Jan. 1975, "Ohmic Contacts for Moderately Resistive P-type InP" by L. M. Schiavone and A. A. Pritchard, pp. 452-453.
Solid-State Electronics, 1975, vol. 18, "A Review of the Theory and Technology for Ohmic Contacts to Group III-V Compound Semiconductors" by V. L. Rideout, pp. 541-550.
J. Electrochem. Soc.: Solid-State Science and Tech., "Contacts to p-Type InP" by F. A. Thiel et al. pp. 317-318 (vol. 124, No. 2, Feb. 1977).
J. Vac. Sci. Technol., 19 (3), Sep./Oct. 1981, "Ohmic Contacts to Lightly Doped n and p Indium Phosphide Surfaces" by W. Tseng, et al. pp. 623-625.
Solid-State Electronics, vol. 24, No. 1, "Low Resistance Ohmic Contacts to n- and p-InP" by E. Kuphal, pp. 69-78.

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