Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1997-02-25
1999-04-20
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257506, 257508, 257757, 438355, 438405, 148DIG12, H01L 2348, H01L 2352
Patent
active
058959530
ABSTRACT:
A buried silicide layer 111 in a bonded wafer 105 makes ohmic contact to a heavily doped buried layer 125. A dopant rapidly diffuses through the silicide layer and into the adjacent semiconductor to form the buried layer.
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Harris Corporation
Martin-Wallace Valencia
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