Ohmic contact to lightly doped islands from a conductive rapid d

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

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Details

257506, 257508, 257757, 438355, 438405, 148DIG12, H01L 2348, H01L 2352

Patent

active

058959530

ABSTRACT:
A buried silicide layer 111 in a bonded wafer 105 makes ohmic contact to a heavily doped buried layer 125. A dopant rapidly diffuses through the silicide layer and into the adjacent semiconductor to form the buried layer.

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M. R. Poponiak and R. O. Schwenker, Enhanced Diffusion In Porous Silicon, Nov., 1974, vol. 17, No. 6.
S. Vaidya, E. N. Fuls and R. L. Johnston, NMOS Ring Oscillators with Cobalt-Silicided P-diffused Shallow Junctions Formed During the "Poly-Plug" Contact Doping Cycle, ED-33, Sep. 1986, No. 9.
Wolf, Silicon Processing, Lattice Press, vol. 2, 1990, pp. 498-500.

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