Ohmic contact for semiconductor devices

Details Ohmic contact for semiconductor devices Ohmic contact for semiconductor devices

1974-01-25

1976-03-09

Tupman, W.

Metal working

Method of mechanical manufacture

Electrical device making

29591, 357 67, 357 71, B01J 1700

Patent

active

039422437

ABSTRACT:
An ohmic contact for semiconductor devices, typically for contact to the P-type region of a GAsP Light Emitting Diode. The ohmic contact comprises a sequential deposition of a multi-layered structure comprising, respectively, aluminum, zinc and aluminum. The multi-layered structure is then heated at time and temperature conditions sufficient to fuse or alloy the metals and form a small region of P+ conductivity in the P-type semiconductor material.

REFERENCES:
patent: 3562604 (1971-02-01), Block
patent: 3636617 (1972-01-01), Schmidt
patent: 3684930 (1972-08-01), Collins
patent: 3728090 (1973-04-01), Hoffman
RCA Technical Notes No. 737, Jan. 1968, "Method of Contacting a Semiconductor Surface", by Assour.
Electrochemical Technology, Jan. 1970, pp. 145 and 146, "Diffusion of Zinc Through Films of Refractory Metals on GaAs," Marinace.

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