Ohmic contact for P type indium phosphide

Details Ohmic contact for P type indium phosphide Ohmic contact for P type indium phosphide

1978-05-05

1980-03-25

Wojciechowicz, Edward J.

357 61, H01L 2348

Patent

active

041953088

ABSTRACT:
A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.

REFERENCES:
patent: 3324361 (1967-06-01), Belasco et al.
patent: 3684930 (1972-08-01), Collins et al.
patent: 3982261 (1976-09-01), Antypas
patent: 4025944 (1977-05-01), Moon

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