Patent
1986-04-10
1988-12-27
Carroll, J.
357 16, 357 61, 357 63, 357 68, 357 71, H01L 29161, H01L 29167, H01L 2348
Patent
active
047944447
ABSTRACT:
An Ohmic contact to a semiconductor body includes a thin semiconductor layer disposed between the body and a conductive layer. The thin layer is not alloyed to the conductive layer and not lattice matched to the body. The layer can have a thickness of less than about 100 nm and a lattice mismatch of at least 0.5 percent. Since the thin layer is not alloyed, a Schottky contact can be formed at the same time as the ohmic contact.
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Liu Shing-Gong
Paczkowski John P.
Carroll J.
Davis Jr. James C.
General Electric Company
Ngo Ngan Van
Steckler Henry I.
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