Ohmic contact

Details Ohmic contact Ohmic contact

1975-12-15

1976-10-05

Ozaki, G.

Metal treatment

Barrier layer stock material, p-n type

148171, 148172, 252 623GA, H01L 738

Patent

active

039842614

ABSTRACT:
A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming the contact utilizes a low temperature range. This low temperature range lessens the amount of surface disassociation and aids in the prevention of contamination of the body of gallium arsenide.

REFERENCES:
patent: 3632431 (1972-01-01), Andre et al.

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