OH and H resistant silicon material

Details OH and H resistant silicon material OH and H resistant silicon material

2006-06-27

2006-06-27

Kunemund, Robert (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S004000, C117S007000, C117S008000, C117S010000, C117S931000, C117S944000

Reexamination Certificate

active

07067006

ABSTRACT:
A method of forming a single crystalline structure having a substantially linear response at least over the wave lengths of 1,200 to 1,700 nanometers, the resulting structure and its use as an optical media or a barrier coating. Thus, maximum obtainable optical transmission with zero attenuation is provided. There is no intrinsic material absorption.

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