Offset reduction and separation of hall and piezoresistive volta

Details Offset reduction and separation of hall and piezoresistive volta Offset reduction and separation of hall and piezoresistive volta

1995-09-29

1999-12-28

Snow, Walter E.

Electricity: measuring and testing

Magnetic

Magnetometers

338 32H, 257421, G01R 3307, H01L 4302, H03K 338

Patent

active

060086432

ABSTRACT:
A multi-current technique for offset reduction in Hall elements is extended in order to separate a piezoresistive voltage, from a Hall voltage, in similar Hall and piezoresistive devices based on a semiconductor such as, for example, Silicon. In a special embodiment, this offset compensation method exploilts directional averaging using biaxial, quadruple current injection from four electrically separate current sources, in order to obtain in-situ cancellation of the off-diagonal piezoresistive voltage that is generated across Hall voltage contacts upon the application of simple shear stress. The technique indicates the possibility of Si-based Hall elements with field-equivalent offsets well below 1milliTesla, even in devices based on (001) Silicon with current injection in the [110] type directions. Simple methods for realizing multiple sources are also discussed, some of which are based on photovoltaic effects.

REFERENCES:
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patent: 4037150 (1977-07-01), Taranov et al.
patent: 5614754 (1997-03-01), Inoue
L..J. van der Pauw, A Method of Measuring Specific Resistivity and Hall Effect of Discs of Arbitrary Shape, Philips Research Reports #13, r9 , 1958.
P. Munter, "A Low-offset Spinning-current Hall Plate", Sensors and Actuators, Mar. 1990, No. 1/3, Lausanne, Ch, pp. 743-746.
R.G. Mani et al., "Temperature-insensitive offset reduction in a Hall effect device", Amer. Inst. of Physics, 1994, pp. 3121-3123.

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