Offset-gate chemical-sensitive field-effect transistors (OG-CHEM

Details Offset-gate chemical-sensitive field-effect transistors (OG-CHEM Offset-gate chemical-sensitive field-effect transistors (OG-CHEM

1982-04-08

1984-03-20

Kaplan, G. L.

Chemistry: electrical and wave energy

Apparatus

Electrolytic

204415, 204416, 204420, 357 25, 435817, C12Q 100, G01N 2746

Patent

active

044379692

ABSTRACT:
A selective chemosensitive microelectronic transducer is provided for the detection and measurement of chemical properties, by engineering a field-effect transistor such that source 6 and drain 7 regions are connected to bonding pads 2 and 4, and the semiconductor bulk connected to pad 1. The metal gate 8 is extended laterally to a remote area 9, and also to bonding pad 3 via a narrow metallization track 5 designed to support only a limited, predetermined electrical current in the manner of a fusible link. External electrical access to the device is achieved with wirebonding 14, and the device is selectively sealed with an inert, impervious encapsulation material 10 such that only gate area 9 remains exposed. Electroactive materials are deposited over the offset-gate area 9, or electrodeposited using connection through 8, 5 and 3. Subsequently, link 5 is open-circuited by pulsed electrical overload, creating a floating chemosensitive gate.

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Piet Bergveld, IEEE Trans. on Biomedical Engineering, vol. BME-19, No. 5, pp. 342-350, (1972).
Ching-Chang Wen et al., IEEE Trans. on Electron Devices, vol. ED-26, No. 12, pp. 1945-1951, (1979).

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